HTD (Hydrogen terminated diamond) boasts the potential to be a topological Mott material. While current ARPES measurements were limited by low energy resolution, the research suggests that higher resolution ARPES at low temperatures will be essential for uncovering a possible Dirac cone in the future. With properties of both metal and insulator phases on the HTD surface, this inhomogeneous, topological Mott material shows promise for future applications. This groundbreaking lab work, however, still demands further validation, enhancement, and scalability.
Researchers observed that Mott IMT induced a local metal phase in HTD seems to reduce the resistance of the channel in HTD-based transistors and leads to higher carrier and current densities. This creation of a Mott transistor opens up a range of exciting potential applications, including serving as a neuromorphic device for neuromorphic computing and an RF power amplifier over 10GHz power transistor with high current. This marks a significant advancement in addressing limitations of current semiconductor transistors
